ENJ2005-B Semiconductor Discrete Device Test System

1 System overview:
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The equipment is highly expandable, and the current and test range can be increased through options. Support current ladder upgrade to 1250A. Using the pulse test method, the pulse width is 300uS specified by the US military standard. Enter the test conditions of the device under test under the prompt of the PC window and click to complete the test task. The automatic judgment function of the pin contact of the device under test. The system uses a test tool with a Kelvin induction structure to automatically compensate for
the voltage drop caused by the internal system and the length of the test cable to ensure accurate and reliable test results.
The panel display device can display the various working status and test results of the system in time, and the function keys on the front panel facilitate system operation. Through the function keys, the system can complete a variety of tasks independently of the main control computer. The system provides connection ports with manipulators, probe stations, and computers, which can support the connection of various auxiliary equipment.
The device has strong expansibility, and the range of current and test can be improved by selecting components. Support current step upgradding to 1250A.
Using pulse test solution, and the pulse width is 300us according to the standard of the US Army. Enter test condition of the device under PC window prompt. C lick to complete the test task. The system supports Automatic judging function of lead leg contact of the device under test. The system adopts Kelvin induction structure,and automatically compensates any pressure drop caused by internal system and the test cable to ensure the accuracy and reliability of test results.
The panel display device can display various working status and system test results in time. The function button on the front panel facilitates system operation.Through functional keys, the system can complete a variety of tasksindependently beside the master computer. The system provides connection ports with manipulator, probe table and computer, which can support the connection of various auxiliary equipment.
2 System features:
wide test range (19 general categories, 27 categories)
, strong upgradeability, through options to increase voltage and current, and increase test varieties range. Support upgrade to the voltage-current step 2000V, 1250A
pulse test method, a pulse width of a predetermined 300uS US standard
DUT pin-contact automatic judgment function, the system experiencing bad device automatically stops the test, the device under test to ensure that damage is not
true Dynamic transconductance test. (The mainstream DC method is used to measure dynamic transconductance, and the result is very different from the actual device.)
System fault online judgment and repair capability, which is convenient for emergency treatment and troubleshooting.
Diode polarity automatic judgment function without manual operation.
3 Application areas:
institutes, universities, Semiconductor device manufacturers,
power supplies, inverters, inverters, converters, CNC, electric welding machines, white goods,
New energy vehicles, rail locomotive maintenance and other
4 equipment purposes:
test analysis, device selection, screening inspection, production line automatic batch testing, etc.
5 test scope:
serial number test device test parameters
01 diode
DIODE IR; BVR; VF
02 transistor
(NPN type / PNP type) ICBO; IEO; ICER; ICES; ICEV; IEBO; BVCEO; BVCBO; BVEBO;
HFE; VCESAT; VBESAT; VBE (VBEON); RE; VF
03
J-FET IGSS; IDOFF; IDGO; BVDGO; BVGSS; VDSON, VGSON;
IDSS; GFS; VGSOFF
04 MOS FET
MOS-FET IDSS; IDSV; IGSSF; IGSSR; VGSF; VGSR; BVDSS;
VGSTH; VDSON, VF(VSD) IDON; VGSON; RDSON; GFS
05
Triac VD+; VD-; VT+; VT-; IGT; VGT; IL+; IL-; IH+; IH-
06 SCR
SCR IDRM; IRRM; IGKO; VDRM; VRRM; BVGKO; VTM;
IGT; VGT; IL; IH
07 insulated gate bipolar power transistor
IGBT ICES; IGESF; IGESR; BVCES; VGETH; VCESAT; ICON;
VGEON; VF; GFS
08 silicon trigger thyristor
STS IH+; IH-; VSW+; VSW-; VPK+;
VPK-; VGSW+; VGSW-
09 Darlington array
DARLINTON ICBO; ICEO; ICER; ICES; ICEX; IEBO; BVCEO ;
BVCER ; BVCEE; BVCES; BVCBO; BVEBO; hFE;
VCESAT; VBESAT; VBEON
10 photoelectric coupling
OPTO-COUPLER ICOFF, ICBO; IR; BVCEO; BVECO; BVCBO; BVEBO;
CTR; HFE; VCESAT; VSAT; VF(Opto- Diode)
11 Relay
RELAY RCOIL; VOPER; VREL; RCONT; OPTIME; RELTIME
12 Voltage stabilizer, Zener diode
ZENER IR; BVZ; VF; ZZ
13 Three-terminal regulator
REGULATOR Vout; Iin;
14 Photoelectric switch
OPTO-SWITCH ICOFF; VD; IGT; VON; ION; IOFF
15
OPTO-LOGIC IR; VF; VOH; VOL; IFON; IFOFF
16 metal oxide varistor
MOV ID+ ID-; VN+; VN-; VC+; VCLMP-; VVLMP+;
17 Solid-state overvoltage protector
SSOVP ID+ ID-; VCLAMP+, VCLAMP-; VT+, VT-; IH+,
IH-;; IBO+ IBO-; VBO+ VBO-; VZ+ VZ-
18 Varistor
VARISTOR ID+; ID-; VC+; VC-
19 Bidirectional trigger diode
DIAC VF+, VF-, VBO+, VBO-, IBO+, IBO-, IR+, IR-,

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Origin blog.csdn.net/qq_37974687/article/details/110925669