System Overview:
The EN-1230A discrete device dynamic parameter test system is for non-destructive transient testing of semiconductor devices. Used for dynamic parameter test of diode, bipolar transistor, MOEFET, IGBT. The test principle of the system conforms to the corresponding national standards and military standards. The system is an independent unit with a closed structure, which has the potential for upgrading and expansion. The options are abundant, and the corresponding test functions can be realized through the flexible combination of options. PC is the main control computer of the system, based on Labview's software operating system, test results can be output in EXCEL and text format, each functional unit is an independent closed individual functional area, no mutual interference, good stability, test ability and signal source It can be upgraded and expanded, low inductance jumper circuit structure, voltage 1500V (reserved 3000V expansion option), current 300A (reserved 500A expansion option), time test accuracy: 1.0ns.
参数条件：
Basic parameters
Power source
resistive/inductive switching characteristic unit
Resistance/Inductance
Switching performance unit
Pulse width: 50µs~2000µs, 0.1µs step diameter/Steps Time resolution: 1ns
Gate drive/Gate drive: ±30V, resolution 0.1V
Resistance/Resistance: Customization/Commission
Drain voltage: 5V~1500V, resolution 1V
Current/current: 1.0~300A, resolution/Resolution: 1.0A
Inductance: 0.01mH~160mH, resolution 10µH, programmable continuously adjustable
Test parameters: turn-on delay time (td(on)), turn-off delay time (td(off)), rise time (tr), fall time (tf)
Gate charge unit
Gate charge unit
Gate drive current: 0~200mA, resolution 1.0mA
Gate voltage: ±30V, resolution ±0.1V
Current/current: 1.0~300A, resolution/Resolution: 1.0A
Drain voltage: 5V~1500V, resolution 1V
Gate equivalent resistance range/Gate equivalent resistance: 0.1~50Ω, adjustable/Adjustable
Test parameters: gate charge (Qg), gate source charge (Qgs), gate drain charge (Qgd), platform voltage (Vgp)
Reverse recovery charge unit
test unit
Forward current (IF): ≤300A, resolution 0.1A
Reverse recovery time (Trr): 10ns~2.0µs, resolution 1ns
Reverse recovery current (Irm): ≤300A
Reverse recovery charge (Qrr): 1nC~100µC, resolution 1nC
Reverse voltage (Vr): 5V~1500V, step1V
Inductance: 0.01mH~160mH, resolution 10µH, programmable continuously adjustable
Short circuit characteristics
Short circuit performance
Max current: 1000A
Gate drive/Gate drive: ±30V, resolution 0.1V
Pulse time/Pulse width: 5us~100us
Drain voltage: 5V~1500V, Step1V
Test parameters: short circuit current Isc, short circuit withstand capacity Esc, short circuit time Tsc
Avalanche test unit
Avalanche test unit
Avalanche resistance / EAS: 100J
Avalanche break down voltage: 2500V
Avalanche current/IAS: 1.0~400A; resolution 1.0A
Avalanche inductive load range: 0.01mH～160mH; resolution 10μH;
Junction capacitance/resistance test unit
Junction capacitor /resistance test unit
Current/Current: 1.0~300A, resolution/Resolution: 1.0A
Voltage/Voltage: 5V~1500V, resolution 1V
Test sweep range: 0.1MHz～5MHz
Input capacitance Cies, output capacitance Coe, reverse transfer capacitance Cres
Reverse partial safe working area unit
Anti-bias SOA unit
Under 2 times the rated current, test the voltage and current when shutting down
To test voltage and current of off-state under 2x rated current