- Overview
IGBT, MOS, etc. are mainstream semiconductor switching devices widely used in modern medium and high-power converters. Among them, IGBT, MOS and other devices are widely used in important electrical equipment such as traction inverters and auxiliary inverters of urban rail transit vehicles. The test of various static parameters provides users with a very intuitive reference for reliable selection of devices. Therefore, it is of extremely important practical significance to accurately measure various static parameters in practice.
The semiconductor parameter tester is a set of automatic test system specially designed for various static parameters of IGBT, MOS and other devices.
The test system has the following characteristics:
the test system is a set of comprehensive parameter test system, which requires high anti-interference ability of the equipment itself, so it is more difficult;
the test system is fully automatic control, and the test can be set by the tester. The program is automatically tested;
the system uses a computer to record the test results, and can convert the test results into EXCEL files for processing.
The test system is mainly composed of the following parts:
gate-emitter leakage current test unit
gate-emitter threshold voltage test unit
collector-emitter voltage test unit
collector-emitter saturation voltage test unit
diode voltage drop test unit
diode Reverse breakdown voltage test unit
- Technical conditions
2.1 Environmental requirements
A. Ambient temperature and humidity: room temperature～40℃, less than 70%;
B. Atmospheric pressure: 86Kpa～106Kpa
C. Grid voltage: AC220V±10% without serious harmonics
D. Grid frequency: 50Hz±1Hz
2.2 Main technical indicators
2.2.1 Gate-emitter voltage VGES and leakage current IGES
voltage VGES: 0-40V error ±2% resolution 0.1V
current IGES: 0.1-10µA error ±2% resolution 0.01µA
collector voltage: VCE =0V
2.2.2 Collector-emitter voltage VCES and current ICES
Collector voltage VCES: 100-2000V error ±2% resolution 1V
collector current ICES: 100µA-5mA error ±2% resolution 10µA
grid voltage VGE= 0V
2.2.3 Gate-emitter threshold voltage VGE(th)
VGE(th): 1-10V error ±2% Resolution 0.1V
display gate-emitter threshold voltage VGE(th)
2.2.4 Collector emission Saturation voltage VCE(sat)
VCE(sat): 0.2-5V error ±2%, resolution 10mV
collector current ICE: 10-100A error ±2%, resolution 1A
2.2.5 Diode voltage drop test VF
VF: 0-5V Error ±3% resolution 10mV
grid voltage VGE: 0V
current IF: 10-100A error ±2% resolution 1A
2.2.6 Diode reverse breakdown voltage BVR
voltage setting: 100V-2000V error ±2% resolution 1V
breakdown current setting: 0.1-10mA error ±2% resolution 10uA - Function overview
3.1 Test range
The test equipment can test the following parameters:
(1) Gate-emitter leakage current test: VGES, IGES;
(2) Gate-emitter threshold voltage test: VGE(th);
(3) ) Collector-emitter voltage test: VCES, ICES;
(4) Collector-emitter saturation voltage test: VCE(sat), ICE;
(5) Diode voltage drop test: VF, IF;
(6) Diode reverse breakdown voltage test: BVR
3.2 Computer control system The control system of
this equipment is mainly controlled by a computer. The computer control system is the central control unit of the test equipment. The equipment's working program, working sequence, switch action status and data acquisition Everything is done by the computer.
NI-USB-6009 is a multifunctional data acquisition card with three sets of data ports, 8 analog input ports, two analog output ports, and 13 digital output ports.
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