1 System overview:
ENJ2005-C is a very representative new type of semiconductor power device graphic system. The IV curve of the system is automatically generated. Function tests can also be set according to actual needs, and the digital display results can be directly read. The curves generated by the system are established point by point using the ATE system to ensure the accuracy and reliability of the data. Provide online fault judgment, and the system will automatically stop testing when the device is in poor contact. The test can be completed by connecting to the computer via USB or RS232 and man-machine interface operation, and the results can be saved in Excel and Date formats.
ENJ2005-C is a representative new semiconductor transistor pictorial system. System IV curve is automatically generated. Also it can be set up according to the actual demand functional testing, and read the digital display results directly. All the curves generated by the system are built by the ATE system point by point, which ensures the accuracy and reliability of the data.
The system provides on-line fault judgment. It aborts test automatically when the device is in bad contact. The test can be completed by connecting to the computer via USB or RS232 through human-machine interface operation. The results can be saved in Excel and Date format.
2 System software support:
The generation of the device test program is realized by the USB interface program on a PC running Windows or WindowsNT . The program provides rapid device test program generation, with full-screen display and enhanced editing help.
A fill-in-the-blank programming method provides users with a concise and intuitive environment. The operator only needs to input the selected device series name and test type, and select the required test parameters at the prompt, without having to have professional computer programming language knowledge. It only takes a few minutes to complete the test program of a device, which is very fast and convenient.
3 Test range:
Leakage parameters: IR, ICBO, LCEO/S/X, IDSS/X, IDOFF, IDRM, IRRM,
ICOFF, IDGO, ICES, IGESF, IGESR, IEBO, IGSSF,
IGSSR, IGSS, IGKO, IR (OPTO )
Breakdown parameters: BVCEO BVCES (300μS Pulse above 10mA) BVDSS, VD,
BVCBO, VDRM, VRRM, VBB, BVR, VD+, VD-,
BVDGO, BVZ, BVEBO, BVGSS, BVGKO
conduction parameters: VCESAT, VBESAT, VBEON , VF, VT, VT+, VT-, VON,
VDSON, VDON, VGSON, VF (Opto-Diode) VGSTH, VTM,
VGETH, VSD, IDON, VSAT, IDON, VO (Regulator)
Notch = IGT1, IGT4, ICON, VGEON,, IIN (Regulator)
turn-off parameters: VGSOFF Trigger parameters: IGT, VGT
Hold parameters: IH, IH+, IH- Lock parameters: IL, IL+, IL Gain parameters: hFE, CTR, gFS Indirect parameters: IL
mixed parameters: rDSON, gFS, Input Regulation, Output Regulation