EN-3020C system is specially designed for testing IGBT. Contact EN Electric: 152 4920 2572. The static parameters of IGBTs and diodes can be tested accurately and accurately: The test ranges are as follows:
Gate-emitter leakage current test unit IGESF, IGESR Gate
-emitter threshold voltage test unit VGE (Th)
Collector-emitter saturation voltage test unit VCE(sat)
Voltage drop test unit VF
Reverse breakdown voltage test unit VR, IR
Gate-emitter voltage test unit VCES, ICES
Computer control system
Parameter index 1. Grid-emitter voltage VGES and leakage current IGES
voltage VGES: 0-40V error ±2% resolution 0.1V
current IGES: 0.1-10µA error ±2% resolution 0.01µA
collector voltage: VCE= 0V
2. Collector-emitter voltage VCES and current ICES
Collector voltage VCES: 100-3500V error ±2% resolution 1V
collector current ICES: 100µA-5mA error ±2% resolution 10µA
grid voltage VGE=0V
3 、Gate-emitter threshold voltage VGE(th)
VGE(th): 1-10V error ±2%, resolution 0.1V
display grid-emitter threshold voltage VGE(th)
4. Collector emitter saturation voltage VCE (sat)
VCE (sat): 0.2-5V error ±2% resolution 10mV
collector current ICE: 50-1500A error ±2% resolution 1A
5. Diode voltage drop test VF VF: 0-5V error ±3% resolution Rate 10mV
grid voltage VGE: 0V
current IF: 50-1500A error ±2% resolution 1A
6. Diode reverse breakdown voltage BVR
voltage setting: 100V-3500V error ±2% resolution 1V
breakdown current setting: 0.1-10mA error ±2%, resolution 10uA
The control system of this equipment is mainly controlled by a computer. The computer control system is the central control unit of the test equipment. The equipment's working procedures, working sequence, switch action status, and data collection are all completed by the computer.
The computer uses a Lenovo all-in-one machine, which has the characteristics of fast speed, large memory, and convenient portability.
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