System Overview:
IGBTs are widely used in modern medium and high power converters, and their switching characteristics determine the switching loss, power density, device stress and electromagnetic compatibility of the device, which directly affect the performance of the converter. Therefore, it is of great practical significance to accurately measure the switching performance of power switching elements. This system is a fully automatic test system for the switching characteristics of IGBT devices and the reverse recovery characteristics of internal freewheeling diodes. It is suitable for testing the characteristic parameters of IGBT devices with current less than 4500A, collector voltage less than 6000V, and freewheeling diode forward current less than 4500A.
System functions:
The test system can test various dynamic parameters of various types of diode, IGBT and MOSFET semiconductor power devices.
Turn-on characteristic test unit: turn-on time ton, rise time tr, turn-on delay time td(on), turn-on loss Eon, current peak Ic-peak max, current change rate di/dt;
Turn-off characteristic test unit: turn-off time toff, fall time tf, turn-on delay time td(off), turn-on loss Eoff, tail current It, tail time Tt, voltage peak Vce-peak max, voltage change rate dv/ dt;
Reverse recovery test unit: reverse recovery charge Qrr, reverse recovery current Irm, reverse recovery time Trr, reverse recovery loss Erec, reverse recovery peak voltage Vrrpeak, reverse recovery voltage change rate dv/dt, reverse recovery Peak power consumption Prrpeak;
Short-circuit safe working area unit;
Reverse partial safe working area unit;