Toshiba's new 100V N-channel power MOSFET devices help reduce power consumption cars

Tokyo - (BUSINESS WIRE) - Toshiba Corporation Electronic components and storage devices (Toshiba Electronic Devices & Storage Corporation, referred to as "Toshiba") issued "XK1R9F10QB", which is a 100V N-channel power metal oxide semiconductor field effect transistor (the MOSFET), the device is suitable for 48V automotive applications, such as load switching, switching power supplies and motor drive. Start shipping today.

This press release contains multimedia content. The full press release can be found at the following URL: https://www.businesswire.com/news/home/20200224006003/en/

This new product is Toshiba's adoption of the new U-MOS XH series MOSFET channel formation of the first product, using the latest [1] generation manufacturing process of the company. It uses low resistance TO-220SM (W) package installed, provides industry-leading low on-resistance [2], the maximum on-resistance of 1.92mΩ, the current "TK160F10N1L" decreased by about 20% compared. This progress helps to reduce power consumption. Since the optimized capacitance characteristics, it provides a lower switching noise, and thus help reduce EMI apparatus [3]. Further, the threshold voltage is reduced to a width of 1V, the switch can be enhanced when the parallel synchronization.

Applications
automotive equipment (load switching, switching power supplies and motor drivers, etc.)

Characteristics
* grooved structure using U-MOS XH series the MOSFET
· industry-leading low on-resistance
  VGS = when 10V, RDS (ON) = 1.92mΩ ( max)
· AEC-Q101 compliance requirements

Main Specifications

(Ta = 25 ° C then)

Product number

polarity

Absolute Maximum Ratings

Drain-source

ON resistance

RDS (ON) maximum

(mΩ)

Channel

The resistance of the envelope

Zth(ch-c)

Maximum

(℃/W)

Package

series

Drain-source voltage

VDSS

(V)

Leakage Current

(DC)

ID

(A)

leak

Electric current

(pulse)

IDP

(A)

Channel temperature

Tch

(℃)

VGS

= 6V

VGS

= 10V when

XK1R9F10QB

N-channel

100

160

480

175

3.31

1.92

0.4

TO-220SM(W)

U-MOS X-H

Note:
[1] As of 25 February 2020
[2] compared with the same product and packaging VDSS maximum rating level; according to Toshiba survey, 2020 February 25.
[3] EMI (Electromagnetic Interference)

Released 2728 original articles · won praise 111 · views 760 000 +

Guess you like

Origin blog.csdn.net/sinat_41698914/article/details/104508057