1. Application
• Switching power
supplies • Motor drives
• Battery powered applications
• Battery management
• UPS
• Lightweight electric vehicles
• Solar energy
2. Specifications
1. IPF017N08NF2S Surface Mount N-Channel 80V 259A (Tc) 250W (Tc) PG-TO263-7-14
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 80 V
25°C Hour Current - Continuous Drain (Id): 259A (Tc)
Drive Voltage (Max Rds On, Minimum Rds On): 6V, 10V
varies Id, Vgs Hour On Resistance (max): 1.7 milliohms @ 100A, 10V
varies Vgs(th) (max) at Id: 3.8V @ 194µA
Gate charge (Qg) (max) at varying Vgs: 186 nC @ 10 V
Vgs (max): ±20V
at varying Vds Input capacitance (Ciss) (Max): 8700 pF @ 40 V
FET Features: -
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package/Casing: TO-263-8, D²Pak (7 leads + tabs), TO-263CA
Basic product number: IPF017N
2. IPF023N08NF2S N-Channel 80V 209A (Tc) 214W (Tc) PG-TO263-7-14
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 80 V
Current at 25°C - Continuous Drain (Id): 209A (Tc)
Drive voltage (maximum Rds On, minimum Rds On): 6V, 10V
at different Id, Vgs On-resistance (maximum): 2.3 milliohm @ 100A, 10V
at different Id Vgs ( th) (max): 3.8V @ 139µA
Gate charge (Qg) (max) at varying Vgs (max): 133 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) (max) at varying Vds : 6200 pF @ 40 V
FET Features: -
Power Dissipation (Max): 214W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG- TO263-7-14
package/casing: TO-263-8, D²Pak (7 leads + tabs), TO-263CA
Basic product number: IPF023N
3. IPF039N08NF2S N-Channel 80V 126A (Tc) 150W (Tc) PG-TO263-7-14
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 80 V
Current at 25°C - Continuous Drain (Id): 126A (Tc)
Drive voltage (maximum Rds On, minimum Rds On): 6V, 10V
at different Id, Vgs On-resistance (maximum): 3.9 milliohm @ 80A, 10V
at different Id Vgs ( th) (max): 3.8V @ 85µA
at Vgs Gate charge (Qg) (max): 81 nC @ 10 V
Vgs (max): ±20V
at Vds Input capacitance (Ciss) (max) : 3800 pF @ 40 V
FET Features: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG- TO263-7-14
package/casing: TO-263-8, D²Pak (7 leads + tabs), TO-263CA
Basic product number: IPF039N
4. IPF014N08NF2S StrongIRFET™2 Power MOSFET 80V Low RDS(ON) with 1.4 mOhm
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 80 V Current
at 25°C - Continuous Drain ( Id): 282A (Tc)
driving voltage (maximum Rds On, minimum Rds On): 6V, 10V
at different Id, Vgs on-resistance (maximum value): 1.4 milliohm @ 100A, 10V
at different Id Vgs (th) ( (max): 3.8V @ 267µA
Gate charge (Qg) (max) at varying Vgs: 255 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) (max) at varying Vds: 12000 pF @ 40 V
FET Features: -
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7 -14
package/casing: TO-263-8, D²Pak (7 leads + tabs), TO-263CA
Basic product number: IPF014N
Adopting new generation power MOSFET technology, IPF017N08NF2S, IPF023N08NF2S, IPF039N08NF2S, IPF014N08NF2S (80V) TO263-7 —— Mingjiada
3. Introduction
StrongIRFET™ 2 series, using next-generation power MOSFET technology, can meet the needs of various applications such as switching power supply, motor driver, battery power supply, battery management, UPS, light electric vehicle and solar energy.
This series of products is highly practical and cost-effective, making it an ideal choice for designers who pursue convenient purchase. The family is optimized for low and high switching frequencies, supporting a variety of applications and enabling design flexibility. The new product supports various packages, including TO-220, TO-220 FullPAK, D2PAK, D2PAK 7-pin and DPAK packages.
4. Pin configuration
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