Samsung (Samsung) capital expenditure this year will double to $ 26 billion, which, in turn to 3DNANDFlash as the largest, research coordinating body ICInsights think, 3DNANDFlash probably will be an oversupply.
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Experts estimate that this year the global semiconductor capital spending will amount to $ 90.8 billion, will grow 35%; of which, Samsung capex this year will double to $ 26 billion, more than the sum of the Intel (Intel) and TSMC.
Samsung this year's capital expenditures will be mainly invested 3D storage-type flash memory (NANDFlash), will reach $ 14 billion, ICInsights pointed out that Samsung will spend $ 7 billion to promote the dynamic random access memory (DRAM) process technology, and compensate for process conversion caused yield loss.
In the foundry, Samsung will invest $ 5.0 billion to amplify 10-nanometer process capacity.
In addition, Samsung invested huge capital expenditure, SK Hynix (Hynix) and Micron (Micron) rivals such as Samsung capital spending will increase significantly, this fear will lead to 3DNANDFlash market oversupply.