ROHM, a world-renowned semiconductor manufacturer (headquartered in Kyoto, Japan), has developed a new dual MOSFET product that integrates two 100V withstand voltage MOSFET* 1 for fan motor drive applications in communication base stations and industrial equipment. The new products are divided into two series, "HP8KEx/HT8KEx (Nch+Nch) series" and "HP8MEx(Nch+Pch*2) series", with a total of 5 new models.
In recent years, in the field of communication base stations and industrial equipment, in order to reduce the current value and improve efficiency, the conventional 12V and 24V systems have gradually been converted to 48V systems, and the power supply voltage has tended to increase. In addition, the fan motor used to cool these devices also uses a 48V system power supply. Considering voltage fluctuations, the MOSFETs that function as switches need to have a withstand voltage of 100V. On the other hand, increasing the withstand voltage means that the on-resistance that has a trade-off relationship with it will also increase, and the efficiency will deteriorate. Therefore, how to balance higher withstand voltage and lower on-resistance at the same time is a big challenge. Fan motors are usually driven by multiple MOSFETs. In order to save space, there is an increasing demand for dual MOSFETs that integrate two chips.
Against this background, ROHM has developed Nch and Pch MOSFET chips using a new process, and has developed a new series of products that achieve the industry's ultra-low on-resistance by adopting a backside cooling package with excellent heat dissipation performance.
The new product achieves the industry's ultra-low on-resistance (Ron)*3 (HSOP8: 19.6mΩ, HSMT8: 57.0mΩ for Nch+Nch products) by adopting ROHM's new process and backside cooling package. Compared with ordinary dual MOSFETs, the on-resistance is reduced by up to 56%, which is very helpful to further reduce the power consumption of application equipment. In addition, by packaging the two chips in one package, the mounting area can be reduced, which helps further save space for application equipment. For example, if the products in HSOP8 package are replaced by two single MOSFETs (TO-252 package with only one built-in chip), the installation area can be reduced by 77%.
The new product has been put into mass production in July 2023 with a monthly output of 1 million pieces (sample price 550 yen/piece, excluding tax). In addition, new products have begun to be sold through e-commerce, and can be purchased through the Ameya360 e-commerce platform.
Currently, ROHM is expanding the withstand voltage lineup of dual MOSFETs for the industrial equipment field, and is also developing low-noise products. In the future, by continuing to help various application products to further reduce power consumption and save space, we will continue to contribute to solving social issues such as environmental protection.
<Product Lineup>
Nch+Nch 双MOSFET
Nch+Pch Dual MOSFET
It is expected that 40V, 60V, 80V, and 150V products will be gradually added to the product lineup.
<Application example>
・Fan motors for communication base stations
・Fan motors for industrial equipment such as FA equipment
・Fan motors for servers such as data centers
<Provide a better solution for motor drive by combining with a pre-driver IC>
ROHM has enabled further miniaturization of motor circuit boards, low power consumption, and silent driving by combining the new products with pre-driver ICs for single-phase and three-phase brushless motors that already have a solid track record in practical applications. By providing comprehensive support for peripheral circuit design in combination with dual MOSFET series and pre-driver ICs, we provide customers with better motor drive solutions that meet their needs.
Example of combining with 100V withstand voltage dual MOSFET
HT8KE5 (Nch+Nch dual MOSFET) and BM64070MUV (pre-driver IC for three-phase brushless motor)
■HP8KE6 (Nch+Nch dual MOSFET) and BM64300MUV (pre-driver IC for three-phase brushless motor), etc.
<Term Explanation>
*1) MOSFET (abbreviation of Metal-Oxide-Semiconductor Field Effect Transistor)
Metal-Oxide-Semiconductor Field Effect Transistor, the most commonly used structure in FETs. are used as switching devices.
*2) Pch MOSFET and Nch MOSFET
Pch MOSFET: A MOSFET that is turned on by applying a negative voltage to the gate with respect to the source. Available at voltages lower than the input voltage
drive, so the circuit structure is relatively simple.
Nch MOSFET: A MOSFET that is turned on by applying a positive voltage to the gate with respect to the source. Compared to Pch MOSFET, drain and source
There is less on-resistance between poles, thus reducing normal losses.
*3) On-resistance (Ron)
The resistance value between the drain and the source when the MOSFET is turned on (ON). The smaller the value, the smaller the loss (power loss) during operation.