MRAM is a very complex multilayer stack of thin films by 10 different materials and more than 30 layers stacked film composition, the film thickness of the portion of the layer of only a few angstroms, 500,000 times thinner than a human hair, similar to the size of an atom, how to control the thickness of the thin film layer, deposition uniformity, quality and other parameters of the interface is the key. Because the atomic level, any defects will be minimal impact on device performance, these new memory in order to achieve mass production, and the integration of new materials must be deposited ability to achieve substantial breakthroughs in silicon.
As a candidate technology of high density memory applications, and the PCRAM ReRAM has a stacked structure comprising multiple elements of a material susceptible to degradation and decline of the film composition. In the phase change material cell as an example, the industry took several decades to find GST film composite material having appropriate composition, and to optimize the conditions, composition of the ReRAM memory material is also very sensitive. Manufacturing Equipment solution needs to provide an accurate film thickness, composition and balance interface quality.
In order to address the challenges MRAM, ReRAM, and PCRAM mass production faced by Applied Materials, Inc. today introduced a new Endura® Clover ™ MRAM PVD platform and Endura® Impulse ™ PVD system, they are also on the company's history so far launched "the most complex and precision chip manufacturing system "and has been shipped to the MRAM chip 5 and 8 PCRAM / ReRAM users.
Clover MRAM PVD internet may be performed under ultra-high vacuum environment multiple process steps to achieve the overall manufacturing the MRAM cell, comprising a material deposition, clean interface and heat treatment, the core is Clover PVD chamber, may be deposited at a level up to five atoms precision material. Level in the system, can be integrated up to seven Clover PVD process reactor chamber to the Endura platform, the vacuum interrupter can be realized without complicated MRAM stack is deposited on a single integrated system. In addition Clover PVD outside the chamber, ultra-high vacuum system is also equipped with a clean interface, oxidation and annealing, and the optimization processing for MRAM device performance.
Over the wafer unique design of the barrier layer is one of the highlights Clover MRAM PVD platform. One target material is exposed only once, and rotates to the next design ideas to establish not only a material having a sharp interface stack atoms, and avoid cross-contamination between the different materials.