The DP83TG720RWRHARQ1 Automotive Ethernet PHY is an automotive Ethernet physical layer transceiver that complies with IEEE 802.3bp and Open Alliance standards. The device provides all physical layer functions required to transmit and receive data over shielded/shielded single twisted pair. The device supports RGMII and MAC connections.
Applications:
Telematics Control Unit (TCU, TBOX)
Gateway and Body Control
ADAS (LIDAR, RADAR and Front Camera)
Detailed Description: Full, Half Transceiver 1/1 IEEE 802.3 36-VQFN (6x6)
Type: Transceiver
Protocol: IEEE 802.3
Number of Drivers/Receivers: 1/1
Duplex: Full, Half
Data Rate: 1Gbps
Voltage-Power Supply: 0.95V ~ 1.1V, 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package/Case: 36-VFQFN Exposed Pad
Supplier Device Package: 36-VQFN (6x6)
DP83TG720RWRHARQ1 Automotive Ethernet PHY, NTHL020N120SC1 Through Hole N-CH 1200V 103A (MOSFET) — Mingjiada
The 1200V EliteSiC (Silicon Carbide) MOSFET is a new technology that offers better switching performance and higher reliability than silicon devices. These MOSFETs feature low on-resistance, which ensures low capacitance and low gate charge. The system benefits that can be achieved with 1200V EliteSiC MOSFETs include improved efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and an operating temperature range of -55°C to 175°C. The 1200V SiC MOSFETs are automotive AEC-Q101 qualified and RoHS compliant. These MOSFETs are ideal for use in boost inverters, charging stations, DC-DC inverters, DC-DC converters, on-board chargers (OBC), motor control, industrial power supplies, and server power supplies.
Features
• Typ. RDS(on) = 20 m
• Ultra-low gate charge (QG(tot) = 203 nC)
• Capacitance (loss = 260 pF)
• 100% UIL tested
• The device is halide free, RoHS compliant and exempt from 7a ,Pb - Free 2LI (Level 2 Interconnect)
Typical Applications
• UPS
• DC−DC Converter
• Boost Inverter
NTHL020N120SC1 Through Hole N-Channel 1200 V 103A(Tc) 535W(Tc) TO-247-3
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V Current
at 25°C - Continuous Drain (Id): 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
at different Id, Vgs On-resistance (Max): 28 milliohms @ 60A, 20V
at different Id Vgs(th) (Max Value): 4.3V @ 20mA
Gate Charge (Qg) at various Vgs (max): 203 nC @ 20 V
Vgs (max): +25V, -15V
Input Capacitance (Ciss) at various Vds (max): 2890 pF @ 800 V
FET Features: -
Power Dissipation (Max): 535W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package/Case: TO-247-3
Basic Product Number: NTHL020
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