Application of FRAM in battery management system BMS

Ferroelectric memory is a kind of random access memory, and it is also a kind of non-volatile memory with a special process. It will quickly read and write access to dynamic random access memory (DRAM). It belongs to personal computer storage. The most commonly used type, combined with the ability to retain data after the power is turned off.

BMS is an intelligent management system for rechargeable batteries. It is a key link between on-board power lithium batteries and pure electric vehicles. It is a system software for information management of construction equipment video monitoring systems and information security system software. BMS is a key part of the driving force lithium battery pack. Its key function is to test various status parameters of the power lithium battery of pure electric vehicles, including single working voltage, total working voltage, current, temperature, etc., and it needs to be simulated according to simulation. Front-end development collects data, carries out SOC estimation and rechargeable battery balancing. Therefore, the reliable storage of monitoring data is very important.

For example, the battery cell power is generally maintained between 30% and 75% to indicate normal operation. If there is an imbalance, it needs to be supplemented from another unit. At this time, the system needs to detect and record the battery cell's power, temperature, voltage, current, etc. Data, and the time interval for a single monitoring record cannot be too long.
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It can be seen from the above figure that the monitoring IC in each battery module uses FRAM to record and write data, which means that the data recording and writing of the BMS system is very frequent, and the writing to the non-volatile memory The entry requirements are relatively high. The FRAM's high endurance (10 trillion erasable times) characteristics just meet the needs of key applications such as BMS for excellent performance, stability and reliability of the memory.

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Origin blog.csdn.net/EVERSPIN/article/details/108322105