LSNC60R180HT LSNC65R180HT LSE65R180HT 650V 20A DFN8*8 TO-263 龙腾 高压超结VDMOS Q:19228180
Product Summary
VDS @ Tj,max 650V
RDS(on),max 0.18Ω
IDM 60A
Qg,typ 30nC
Description
LonFETTM Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 30nC)
100% UIS tested
RoHS compliant
Applications
Power faction correction (PFC).
Switched mode power supplies
(SMPS).
Uninterruptible power supply (UPS).