Microchip SRAM and NVSRAM series (SPI serial SRAM devices and NVSRAM) provides an easy way to add the external RAM
Characteristics of
low-power CMOS technology: 4μA maximum standby current
Standard 4-pin SPI interface: a chip selection, data input, data output and a clock
Unlimited memory write, write zero time
Providing battery backup (512Kb, 1Mb)
32-byte page
High-speed SDI (2x) and SQI (4x) mode supports up to 80Mb / s
Industrial temperature range: -40 ° C to + 85 ° C
Small 8-lead SOIC, TSSOP and PDIP packages
Microchip's serial SRAM series provides a method of external RAM can be added to almost any application in this approach are relatively inexpensive, easy to operate. Compared to traditional parallel SRAM, lower power consumption of these devices 8 pin serial, with the I / O number of connections less. Using these devices, the designer can use a smaller microcontroller, only without the on-board RAM in order to obtain greater and greater use of the device. Zero write cycle time makes these devices very suitable for graphics, data buffering, data recording, display, mathematical, audio, video, and other data-intensive functions offloaded to separate SRAM. Compared with the standard SPI, SDI, and allow the use of SQI two times and four times the data rate. Microchip's SPI compatible serial SRAM devices have 64,256,512 1024Kb capacity of four and for user selection. These devices achieve high-speed performance with low power consumption, very suitable for embedded applications require larger RAM.
Further, these devices also 512Kb and 1Mb Vbat pin having a battery backup, so that when an external battery or super capacitor is connected to the pin, the device having a non-volatile. The device includes a serial NVSRAM instantaneous unlimited service life and write functions, particularly useful for such scales, black-box or the like and data logger applications.