Related studies indicate that, if substituted MRAM embedded microcontroller eFlash and SRAM, can save up to 90% power; if a single transistor MRAM substituted six transistor SRAM, can achieve higher bit density and small chip size, power and area cost of these advantages will make MRAM become a strong contender edge side of the device. Compared to the conventional NAND flash memory, the PCRAM or ReRAM memory storage class can provide more than 10 times more than the access speed, is more suitable for storing data in the cloud.
MRAM is a nonvolatile memory technology that includes a high-speed read write capability proximity static random access memory, non-volatile, and a capacity density DRAM is almost the same service life of flash memory, but the average energy consumption far lower than DRAM, and can be repeated indefinitely write.
MRAM technology reason for being sought after by the industry, because as the industry continued to move to smaller technology nodes, DRAM and NAND flash memory (Flash) is facing severe challenges miniature, is seen as MRAM memory chips is expected to replace these independent memory components. Considering the MRAM has fast read / write time, high tolerance and strong retention capacity, is also seen as an attractive embedded technology for substitution of Things (IoT) devices embedded flash and 3 cache SRAM.
It is not intended to replace a flash memory, but to process the data generated during computation. MRAM has read and write high speed, but also can save data permanently, so it belongs to the RAM, non-volatile and take care of.