Everspin is unique in the industry in magnetic semiconductor memory design, manufacture and application of knowledge and experience related to the delivery. It has more than 600 patents and applications valid IP combination, and in a plane perpendicular to the magnetic tunnel junction (MTJ) development of STT-MRAM bit cell is the market leader. In the data center, cloud storage, energy, industrial, automotive and transportation markets in the deployment of more than 120 million MRAM and STT-MRAM product, laid the most powerful and fastest-growing user base around the world MRAM. The following describes switching on MRAM technology
MRAM uses a switching transistor, an MTJ cell to provide a simple high density memory. Toggle Everspin using patented battery design, high reliability can be provided. Data in 20-year temperature is always non-volatile.
During reading, the transfer transistor is activated, and data is read by comparing the reference resistance device unit. During writing, a magnetic field from the write line and write line writing unit 2 will be at the intersection of two lines, but does not interfere with any of the other units in a line.
EVERSPIN MRAM products using a transistor, a magnetic tunnel junction (MTJ) memory cell as a memory element. MTJ by a fixed magnetic layer, a thin tunnel dielectric barrier and the free magnetic layer. When a bias is applied to the MTJ, the spin-polarized electron magnetic layer through the dielectric barrier layer by a process called tunneling.
When the magnetic moment of the free layer is parallel to the fixed layer, having a low resistance of the MTJ device, and when the magnetic moment of the free layer and the pinned layer moment antiparallel, having a high resistance of the MTJ device.
MRAM is a magnetic electron spin without wear provide nonvolatile memory use. MRAM stores information in an integrated circuit with a silicon material, thereby providing a non-volatile SRAM and Flash speed in a single infinite durable device.
Everspin MRAM device aims at combining the best features of nonvolatile memory and RAM, providing "instant-on" function and power protection for the more and more electronic systems.