[Transfer] 65nm TSMC process library file summary

路径1:/cas2/data1/library/library/tsmc65n/PDK_doc/TSMC_DOC_WM
路径2:/home/liucx19/liucx/my_library_files/TSMC_DOC_WM

Files and their contents Introduction:
2D4GHz_VCO_Process_Vehicle_Design_Report_2007.pdf report, basically useless
Application_note_for_customized_cells.pdf speak custom elements territory
APPNOTE_PCDEF_2005_1.pdf extract parasitics
CRN65_CDF_Usage.pdf speak is called element underlying meaning of each node and related settings
CRN65LP_v1d5a_pdkFSAChecklist.pdf expressed support for a variety of Platform, a summary of the content of various components in the
pdk , including RF components crtmom_rf_device_route_guidance_for_RF_application.pdf explains how to place such special capacitors to obtain better RF performance rotative metal-oxide-metal (RTMOM) capacitor
DNA_Extraction_User_Guide_v1.0.pdf due to PDK More and more complex, compare two PDKs with different
LayoutDependentEffectSetupUsage.pdf Layout dependent effects
N65_RTMOM_revision_083109.pdf RTMOM capacitor process angle changes
parasitic_3T_use_guide.pdf Multi-port device manual, multi-port means that there are many physical locations that affect a certain device Performance.
RF_LNA_TV_Report_v1d0.pdf RF low-noise amplifier report, useless
Statistical_Sim_AppNote_N65_final_20070926.pdf explains the mismatch situation under different process angles, including the setting of model library and Monte Carlo analysis.
TCF_tutorial.pdf mainly focuses on TCF (TSMC Capacitor Finder), and mainly focuses on MOM capacitor
TCF_User_Guide.pdf to explain the usage of TCF, mainly To save design time to obtain a suitable design capacitor
TIF_tutorial.pdf For a specified area, TIF is used to search for a suitable inductor
TIF_User_Guide.pdf explains the usage of TIF, mainly to save design time to obtain a suitable design power Feel
tsmc_PDK_usage_guide.pdf from the environment variable setting to the various details of the final layout simulation

/PDK_doc/TSMC_DOC_WM/model/2.5V/
TN65CMSP007_1.5.pdf Process library device details, if necessary, you can turn to
CRN65LP_LOD_WPE_Table.txt RF MOS layout dependent effect parameters
Provide Spice simulation parameters

/PDK_doc/TSMC_DOC_WM/model/3.3V/
CRN65LP_LOD_WPE_Table.txt RF MOS layout dependent effect parameters
Provide Spice simulation parameters

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Origin blog.csdn.net/weixin_38753095/article/details/107094109