A brief note of RF pulse power amplifier parameters

The RF pulse power amplifier is suitable for the amplification of the constant envelope modulation signal. In the design of the RF pulse power amplifier, there is a parameter ceiling drop which refers to the difference between the maximum peak value of the amplified pulse signal and the normal pulse by 90%. The ceiling drop reflects the power amplifier Whether the energy storage capacitor is reasonable or not can be improved by changing the energy storage capacitor of the bias circuit. For the rising and falling edges of the RF pulse power amplifier, the junction capacitance of the selected amplifying tube should be referenced according to the required design time when selecting the amplifying tube. The junction capacitance should be as small as possible. If the junction capacitance cannot be selected appropriately, Reduce the impact on rising and falling edges by increasing the appropriate resistance value in parallel. for reference only!