1200V 10A SiC Schottky diode
characteristics of the package outline
⚫ maximum junction temperature [deg.] C to 175
⚫ high surge current capacity
⚫ zero reverse recovery current
⚫ zero forward recovery voltage
⚫ high frequency operation
⚫ temperature independent switching properties
⚫ n conducting a positive temperature coefficient voltage V F
applied
⚫ solar booster
⚫ inverters wheeling anti-parallel diode
device number package
IV1D12010T2 TO247-2
⚫ Vienna rectifying the three-phase PFC converter
⚫ AC / DC converter
⚫ switching power supply
