Samsung is improving 1Gb MRAM life issues

It is reported that Samsung has successfully developed embedded flash memory is expected to replace (eFlash) embedded magnetoresistive random access memory (eMRAM), capacity of 1Gb, excellent test chip rate reached 90%.

With the advent of the era of 5G things, the development of fast memory areas, and in this area, Korean manufacturers have a clear advantage.

MRAM chip is a memory incorporated in resistance of the nonvolatile random access and the two characteristics, memory and hard drive can double as a new storage medium. NAND flash memory writing speed can reach thousands of times, in addition to its low production process requirements, the product yield is high, the cost can be well controlled. In terms of life expectancy due to the special MRAM storage, product durability life also goes far beyond the traditional RAM.

It reported that Samsung is improving 1Gb MRAM life issues, in addition to support the storage life of up to 10 years, at a temperature of 105 ℃ can be completed 100 million times to read and write, can be increased to 100 million times to read and write at 85 ℃ in a normal operating environment is expected to reach 1 trillion read and write. MRAM is currently the representative of the new storage has been developed to a critical stage, whether to become the next generation to replace NAND flash memory medium in addition to constantly improving materials and processes, building technology ecosystem perfect device is also very critical. We believe that under the guidance and the promotion of the major manufacturers of market demand, certain storage products toward higher performance and greater capacity, and cost better direction.

MRAM memory dedicated to the production of EVERSPIN in magnetic memory design, manufacture and deliver to the relevant application is unique knowledge and experience in the semiconductor industry. Everspin has more than 600 patents and applications are effective IP portfolio, and in a plane perpendicular to the magnetic tunnel junction (MTJ) development of STT-MRAM bit cell is the market leader. Everspin in the data center deployed more than 120 million MRAM and STT-MRAM products in the automotive and transportation markets, lays the most powerful and fastest-growing user base around the world MRAM.

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Origin www.cnblogs.com/sramsun/p/12221951.html