reference
Understand the "black words" in solid-state drives - Simple Encyclopedia
First, you need to know what your master control is. The common ones are these
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Phison = Phison
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SMI = Hui Rong
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Marvel = Marvel Electronics (Horse Brand Master Control)
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Maxio = Maxio
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Yeestor(SiliconGo) utility = Yeestor
My general order of guessing: Miscellaneous brands (moving speed, Quanxing) try Yeestor first, then SMI, Phison, Marvel
Regular disk can skip Yeestor and start from SMI
First download the corresponding one from the official website. Download address: SSD utils
Here I see that I have 5 hard drives, and I want to check the fourth hard drive, just press 3
It can be seen that it has been identified, this is the master control of SMI 2259XA
Intel 64L(B17A) TLC 512Gb/CE 512Gb/die
Regarding the difference between MLC / TLC /QLC, it is strongly recommended to watch the hardware tea talk about this
Glossary
Be careful when Bad Block From Pretest is greater than Original Spare Block Count
The main thing is to look at this, other additional parameters are as follows:
Channel: channel
When it comes to the number of channels of a solid-state drive, most of the time it refers to flash memory channels, but M.2 NVMe solid-state drives have parameters for PCIE channels. We are talking about the former here.
The number of flash memory channels directly reflects the concurrent read and write capabilities of the SSD. It can be simply understood as how many lanes there are on the road. Obviously, the more the number of lanes, the better the theoretical performance. Of course, there are many influencing factors, and the number of channels is just a foundation.
CE: chip select signal
The number of CEs is often followed by the flash channel. You can often see such an introduction in some solid-state hard disk evaluations, such and such a master supports X channels, and each channel supports Y CE. CE is the abbreviation of Chip Enable. The figure below shows the logical structure of a Toshiba flash memory particle, which is packaged in 2 Die and has two CE signals.
In addition to channels that can improve throughput in parallel, multi-CE interleaving can also improve the performance of SSDs. The flash channels of the main control and the number of CEs supported by each channel will also affect how much solid-state drive capacity it can ultimately provide.
Package: package
The flash memory we can see is a package package, which has two forms: TSOP or BGA. The pins of the former are drawn out on both sides of the package, while the latter has a ball grid array at the bottom of the package. The picture below shows the TSOP packaged flash memory particles used in Toshiba TR200 SSD. There is no difference between TSOP and BGA itself. Usually, TSOP is used when there is enough space, while M.2 solid-state drives mostly choose BGA form with higher packaging density. BGA packaging has another advantage: each particle can support 2 or even 4 flash memory channels, while TSOP can only support 1.
The black particles we see above are not the original appearance of the flash memory. It is just one or more chips connected by wire bonding or TSV through-silicon via process, and then packaged with resin material and lead out the pins. The chip is a small piece of qualified die picked from the flash memory wafer.
Commonly known as the original film is the high-quality particles that are tested and packaged by the original factory, and marked with the original manufacturer's logo. The original solid-state hard drive, such as the above-mentioned Toshiba TR200, uses this type of flash memory. The white chip is a flash memory chip packaged by an unknown system flash memory chip that has not been certified by the original factory; the black chip is the waste that was clearly eliminated in the inspection, and it is bet on the character after being recycled by the profit-minded people at a low price.
Die: This does not mean death
Die is also called LUN (logical unit), and it is also the smallest independent unit in flash memory that can execute commands and report its own status. The figure below is a chip composed of 4 Planes and two Dies.
The capacity of a single die is an indicator to measure the advancement of flash memory technology. The larger the capacity of a single die, the higher the storage density of the flash memory, and the larger the capacity of the solid state drive produced. At present, Toshiba's third-generation 3D TLC flash memory has achieved a single die capacity of 512Gb, and if it is a QLC type, it can reach the level of 768Gb.
Plane: face
A Flash Die can have 1 or more Planes. The figure below is a 512Gb Die of Toshiba BiCS3 flash memory, which includes two Plane planes with a capacity of 256Gb, with a total capacity of 512Gb.
Block: block
Next comes the microscopic realm, usually the level where the appearance cannot be seen directly. NAND flash memory has a constant use requirement since its inception: before writing (Program) data, it must be erased (Erase), and the smallest erasing unit of flash memory is the Block block.
Page: page
Each Block is composed of hundreds or even thousands of pages, and the meaning of Page is also extraordinary. It is the smallest unit that can be read and written in flash memory. A page of the current flash memory is usually 16KB. If you need to read 512 bytes of data, then at the flash memory level, you must read all the contents of the entire Page page containing the 512 bytes of data (the actual read is 16KB) .
Cell: unit
Each 16KB Page is composed of a large number of Cell units. Cell is the smallest working unit of flash memory, performing the task of data storage. Flash memory is divided into SLC (1bit/Cell), MLC (2bit/Cell), TLC (3bit/Cell) and QLC (4bit/Cell) according to the amount of data that can be stored in each cell. The cost decreases sequentially, and the capacity increases sequentially. Durable also decreased in turn. At present, 3D TLC is the main type of flash memory. High-quality original flash memory, combined with a master controller with LDPC error correction, can achieve a lifespan of about 3,000 times of erasing and writing, which is close to the past 2D planar MLC flash memory.
