ESN4485 is a P-channel enhancement mode MOS field effect transistor. Utilizes advanced trench technology and design to provide excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching and charging circuits. The standard product ESN4485 is lead-free.
Features
1、-40V，RDS（ON）=13 mΩ（Typ），VGS=-10V
RDS（ON）=17 mΩ（Typ），VGS=-4.5V
2. Quick switching
3. High-density battery design with low RDS (on)
4. Material: Halogen free
5. Reliable and sturdy
6. Avalanche rating
7. Low leakage current
application
1. PWM application
2. Load switch
3. Power management for portable/desktop computers
4. DC/DC conversion