nvSRAM uses traditional trapped charge technology for non-volatile storage. Data can be leaked due to data loss due to temperature and excessive write cycles.
MRAM provided by RAMSUN will provide the most cost-effective non-volatile RAM solution. nvSRAM is built by combining standard 6-transistor SRAM with non-volatile EEPROM storage elements in each cell. The total complexity of the cell is 12 transistors. Everspin MRAM is built using a much simpler 1-transistor, 1-magnetic-tunnel-junction cell. Simple Everspin MRAM cells improve manufacturing efficiency and reliability.
The reliability of nvSRAM depends not only on the memory chip, but also on the quality of the external VCAP capacitor. Capacitors must be carefully selected to ensure reliable power sequencing.
MRAM uses magnetic tunnel junction technology for non-volatile memory. Data does not leak at high temperatures, and there are no wear-out mechanisms in this technology that limit reads, writes, or the number of power cycles. The data retention period at 125°C is better than 20 years.
Every write using MRAM is instant non-volatile and lasts at least 20 years. There is no data transfer from volatile memory cells to non-volatile memory cells, and there are no external capacitors or battery backups. Elimination of external components, highly reliable data retention, and 35ns SRAM-compatible read/write access times make Everspin MRAM a viable candidate to replace nvSRAM without compromising system performance.